nc->op.addrs[nc->op.naddrs++] = page;
nc->op.addrs[nc->op.naddrs++] = page >> 8;
- if ((mtd->writesize > 512 && chip->chipsize > SZ_128M) ||
- (mtd->writesize <= 512 && chip->chipsize > SZ_32M))
+ if (chip->options & NAND_ROW_ADDR_3)
nc->op.addrs[nc->op.naddrs++] = page >> 16;
}
}
ctx->write_byte(mtd, (u8)(page_addr >> 8));
- /* One more address cycle for devices > 32MiB */
- if (this->chipsize > (32 << 20))
+ if (this->options & NAND_ROW_ADDR_3)
ctx->write_byte(mtd,
((page_addr >> 16) & 0x0f));
}
if (page_addr != -1) {
WriteDOC((unsigned char)(page_addr & 0xff), docptr, Mplus_FlashAddress);
WriteDOC((unsigned char)((page_addr >> 8) & 0xff), docptr, Mplus_FlashAddress);
- /* One more address cycle for higher density devices */
- if (this->chipsize & 0x0c000000) {
+ if (this->options & NAND_ROW_ADDR_3) {
WriteDOC((unsigned char)((page_addr >> 16) & 0x0f), docptr, Mplus_FlashAddress);
printk("high density\n");
}
host->addr_value[0] |= (page_addr & 0xffff)
<< (host->addr_cycle * 8);
host->addr_cycle += 2;
- /* One more address cycle for devices > 128MiB */
- if (chip->chipsize > (128 << 20)) {
+ if (chip->options & NAND_ROW_ADDR_3) {
host->addr_cycle += 1;
if (host->command == NAND_CMD_ERASE1)
host->addr_value[0] |= ((page_addr >> 16) & 0xff) << 16;
host->devtype_data->send_addr(host,
(page_addr >> 8) & 0xff, true);
} else {
- /* One more address cycle for higher density devices */
- if (mtd->size >= 0x4000000) {
+ if (nand_chip->options & NAND_ROW_ADDR_3) {
/* paddr_8 - paddr_15 */
host->devtype_data->send_addr(host,
(page_addr >> 8) & 0xff,
chip->cmd_ctrl(mtd, page_addr, ctrl);
ctrl &= ~NAND_CTRL_CHANGE;
chip->cmd_ctrl(mtd, page_addr >> 8, ctrl);
- /* One more address cycle for devices > 32MiB */
- if (chip->chipsize > (32 << 20))
+ if (chip->options & NAND_ROW_ADDR_3)
chip->cmd_ctrl(mtd, page_addr >> 16, ctrl);
}
chip->cmd_ctrl(mtd, NAND_CMD_NONE, NAND_NCE | NAND_CTRL_CHANGE);
chip->cmd_ctrl(mtd, page_addr, ctrl);
chip->cmd_ctrl(mtd, page_addr >> 8,
NAND_NCE | NAND_ALE);
- /* One more address cycle for devices > 128MiB */
- if (chip->chipsize > (128 << 20))
+ if (chip->options & NAND_ROW_ADDR_3)
chip->cmd_ctrl(mtd, page_addr >> 16,
NAND_NCE | NAND_ALE);
}
chip->chip_shift += 32 - 1;
}
+ if (chip->chip_shift - chip->page_shift > 16)
+ chip->options |= NAND_ROW_ADDR_3;
+
chip->badblockbits = 8;
chip->erase = single_erase;
if (page_addr != -1) {
write_addr_reg(nand, page_addr);
- if (chip->chipsize > (128 << 20)) {
+ if (chip->options & NAND_ROW_ADDR_3) {
write_addr_reg(nand, page_addr >> 8);
write_addr_reg(nand, page_addr >> 16 | ENDADDR);
} else {
*/
#define NAND_NEED_SCRAMBLING 0x00002000
+/* Device needs 3rd row address cycle */
+#define NAND_ROW_ADDR_3 0x00004000
+
/* Options valid for Samsung large page devices */
#define NAND_SAMSUNG_LP_OPTIONS NAND_CACHEPRG